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Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer

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HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

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Dia 3 Inch 4 Inch Technical Ceramic Parts InP Based Epi Wafer

Brand Name : ZG

Model Number : MS

Certification : CE

Place of Origin : CHINA

MOQ : 1 piece

Price : USD10/piece

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 10000 pieces per month

Delivery Time : 3 working days

Packaging Details : Strong wooden box for Global shipping

Application : microelectronics , optoelectronics and RF Microwave

Diameter : Ø 3" / Ø 4" GaAs wafer

Thickness : 500 um ~ 625 um

Grade : Epi polished grade / mechanical grade

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InP Based Epi Wafer

We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 2" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( InP ) or ternary alloy ( InGaAs , InAlAs , InGaAsP ) on InP substrate , singel layer or multiple-layer superlattice structures with superior crystalline quality to meet a variety of device needs . Our highly skilled experts can work with you to design and optimize your InP epi layer structure . Please contact us for more product information or discuss your epi layer structure .

InP Based Epi Wafer Capability

Our reactors are configured for a variety of material systems and process conditions. We can provide custom epitaxy for a variety of device applications ranging from LEDs to HEMTs.

Material Capability	Substrate	Wafer Size
InP/InP	InP wafer	Up to 4 inch
InAlAs/InP	InP waferr	Up to 4 inch
InGaAs/InP	InP wafer	Up to 4 inch
InGaAsP/InP	InP wafer	Up to 4 inch
InGaAs/InGaAsP/InP	InP wafer	Up to 4 inch
InP/InAlAs/InP	InP wafer	Up to 4 inch

Optoelectronic applications:

Photodetectors, VCSELs, laser diodes, LEDs, SOAs, Waveguides

Electronic applications:

FETs, HBTs, HEMTs, diodes, Microwave devices.

Epi Layer Structure ( HEMT / HBT )

Growth	MOCVD
Dopant source	P type / Be , N type / Si
Cap layer	i-InP layer
Active layer	n-InGaAs layer
Space layer	i-InGaAsP layer
Buffer layer	i-InP layer
Substrate	Ø 2" / Ø 3" / Ø 4" InP wafer

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