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Brand Name : ZG
Model Number : MS
Certification : CE
Place of Origin : CHINA
MOQ : 1 piece
Price : USD10/piece
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 10000 pieces per month
Delivery Time : 3 working days
Packaging Details : Strong wooden box for Global shipping
Application : Semiconductor device , Microelectronics , Sensor , Solar cell , IR optics.
Diameter : Ø 2" / Ø 3" / Ø 4"
Thickness : 500 um ~ 625 um
Grade : Electronics grade
Ge wafer to micro-electronics and opto-electronics industry in diameter range from 2 inch to 4 inch
We are a worldwide supplier of single crystal Ge wafer ( Germanium wafer ) and single crystal Ge ingot , we have a strong advantage in providing Ge wafer to micro-electronics and opto-electronics industry in diameter range from 2 inch to 4 inch . Ge wafer is an elemental and popular semiconductor material , due to its excellent crystallographic properties and unique electric properties , Ge wafer is widly used in Sensor , Solar cell and Infrared optics applications . We can provide low dislocation and epi ready Ge wafers to meet your unique germanium needs . Ge wafer is produced as per SEMI. standard and packed in standard cassette with vacuum sealed in clean room enviroment , with a good quality control system , We are dedicated to providing clean and high quality Ge wafer products . We can offer both electronics grade and IR grade Ge wafer , please contact us for more Ge product information
Single Crystal Germanium Wafer Capability
SWI can offer both electronics grade and IR grade Ge wafer and Ge ingot , please contact us for more Ge product information .
Conductivity | Dopant | Resistivity ( ohm-cm ) | Wafer Size |
---|---|---|---|
NA | Undoped | >= 30 | Up to 4 inch |
N type | Sb | 0.001 ~ 30 | Up to 4 inch |
P type | Ga | 0.001 ~ 30 | Up to 4 inch |
Applications:
Semiconductor device , Microelectronics , Sensor , Solar cell , IR optics.
Ge Wafer Properties
Chemical formula | Ge |
Crystal structure | Cubic |
Lattice parameter | a=0.565754 |
Density ( g / cm3 ) | 5.323 |
Thermal conductivity | 59.9 |
Melting point ( °C ) | 937.4 |
Product Specification
Growth | Czochralski |
---|---|
Diameter | Ø 2" / Ø 3" / Ø 4" |
Thickness | 500 um ~ 625 um |
Orientation | <100> / <111> / <110> or others |
Conductivity | P - type / N - type |
Dopant | Gallium / Antimony / Undoped |
Resistivity | 0.001 ~ 30 ohm-cm |
Surface | SSP / DSP |
TTV | <= 10 um |
Bow / Warp | <= 40 um |
Grade | Electronics grade |
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2 Inch To 4 Inch Ge Wafer To Micro Electronics And Opto Electronics Industry Images |